RQJ0602EGDQS MOSFET Transistor

The RQJ0602EGDQS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0602EGDQS transistor as follows.

RQJ0602EGDQS Transistor Specification

Transistor Code		RQJ0602EGDQS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.485Ohm
Power Dissipation (Maximum)	PD	1.5W

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