RQK0603CGDQS MOSFET Transistor

The RQK0603CGDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0603CGDQS transistor as follows.

RQK0603CGDQS Transistor Specification

Transistor Code		RQK0603CGDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.205Ohm
Power Dissipation (Maximum)	PD	1.5W

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