RQA0009TXDQS MOSFET Transistor

The RQA0009TXDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQA0009TXDQS transistor as follows.

RQA0009TXDQS Transistor Specification

Transistor Code		RQA0009TXDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Transistor SMD Code		TX
Drain-Source Voltage (Maximum)	VDS	16V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.46Ohm
Power Dissipation (Maximum)	PD	15W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C

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