RQJ0305EQDQS MOSFET Transistor

The RQJ0305EQDQS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0305EQDQS transistor as follows.

RQJ0305EQDQS Transistor Specification

Transistor Code		RQJ0305EQDQS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	0.8W

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