RQJ0601DGDQS MOSFET Transistor

The RQJ0601DGDQS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0601DGDQS transistor as follows.

RQJ0601DGDQS Transistor Specification

Transistor Code		RQJ0601DGDQS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.124Ohm
Power Dissipation (Maximum)	PD	1.5W

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