RQA0010VXDQS MOSFET Transistor

The RQA0010VXDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQA0010VXDQS transistor as follows.

RQA0010VXDQS Transistor Specification

Transistor Code		RQA0010VXDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Transistor SMD Code		VX
Drain-Source Voltage (Maximum)	VDS	16V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.43Ohm
Power Dissipation (Maximum)	PD	9W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C

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