RQJ0306FQDQS MOSFET Transistor

The RQJ0306FQDQS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0306FQDQS transistor as follows.

RQJ0306FQDQS Transistor Specification

Transistor Code		RQJ0306FQDQS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	0.8W

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