RQK0301FGDQS MOSFET Transistor

The RQK0301FGDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0301FGDQS transistor as follows.

RQK0301FGDQS Transistor Specification

Transistor Code		RQK0301FGDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	1.5W

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