NGTB60N60S IGBT Transistor

The NGTB60N60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB60N60S transistor as follows.

NGTB60N60S Transistor Specification

Transistor Code		NGTB60N60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	119W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		169
Rise Time		48

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