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IGC03R60DE IGBT Transistor

The IGC03R60DE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC03R60DE transistor as follows.

Circuit diagram symbol of the IGC03R60DE transistor

IGC03R60DE Transistor Specification

Transistor Code IGC03R60DE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 2.5A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 15

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