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MMG50A120B6C IGBT Transistor

The MMG50A120B6C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG50A120B6C transistor as follows.

Circuit diagram symbol of the MMG50A120B6C transistor

MMG50A120B6C Transistor Specification

Transistor Code MMG50A120B6C
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 400W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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