MGW21N60ED IGBT Transistor

The MGW21N60ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGW21N60ED transistor as follows.

MGW21N60ED Transistor Specification

Transistor Code		MGW21N60ED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	142W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1605pF
Rise Time		29

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