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BT25T120ANF IGBT Transistor

The BT25T120ANF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BT25T120ANF transistor as follows.

Circuit diagram symbol of the BT25T120ANF transistor

BT25T120ANF Transistor Specification

Transistor Code BT25T120ANF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector Power Dissipation (Maximum) Pc 312W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 82
Rise Time 21

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