KGH25N120NDA IGBT Transistor

The KGH25N120NDA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGH25N120NDA transistor as follows.

KGH25N120NDA Transistor Specification

Transistor Code		KGH25N120NDA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P(N)E
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		200pF
Rise Time		70

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