APT25GP90BDF1 IGBT Transistor

The APT25GP90BDF1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT25GP90BDF1 transistor as follows.

APT25GP90BDF1 Transistor Specification

Transistor Code		APT25GP90BDF1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	72A
Operating Junction Temperature (Maximum)		150 oC

UXPython is not the creator or an official representative of the APT25GP90BDF1 IGBT transistor. You can download the official APT25GP90BDF1 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

BSM50GD170DL IGBT Transistor GT45G128 IGBT Transistor IXGP12N100U1 IGBT Transistor SGP06N60 IGBT Transistor ART40U120 IGBT Transistor VWI15-12P1 IGBT Transistor IGP20N65F5 IGBT Transistor MWI150-12T8T IGBT Transistor IXGK72N60B3H1 IGBT Transistor APT54GA60S IGBT Transistor FGA25N120ANTDTU_F109 IGBT Transistor MGP15N40CL IGBT Transistor APT50GF60JU3 IGBT Transistor APTGS75X170E3 IGBT Transistor IXBT28N170A IGBT Transistor APT15GP90KG IGBT Transistor IXSH40N60B IGBT Transistor HGT1S2N120CNDS IGBT Transistor HGTG10N120BN IGBT Transistor CPV363M4UPBF IGBT Transistor