RQK0608BQDQS MOSFET Transistor

The RQK0608BQDQS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQK0608BQDQS transistor as follows.

RQK0608BQDQS Transistor Specification

Transistor Code		RQK0608BQDQS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	1.5W

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