RQJ0301HGDQS MOSFET Transistor

The RQJ0301HGDQS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RQJ0301HGDQS transistor as follows.

RQJ0301HGDQS Transistor Specification

Transistor Code		RQJ0301HGDQS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		UPAK
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	5.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	1.5W

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