T0800EB45G IGBT Transistor

The T0800EB45G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the T0800EB45G transistor as follows.

T0800EB45G Transistor Specification

Transistor Code		T0800EB45G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	6400W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	800A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		3300

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