MMIX1B20N300C IGBT Transistor

The MMIX1B20N300C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1B20N300C transistor as follows.

MMIX1B20N300C Transistor Specification

Transistor Code		MMIX1B20N300C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		440
Rise Time		12

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