IXBF14N300 IGBT Transistor

The IXBF14N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF14N300 transistor as follows.

IXBF14N300 Transistor Specification

Transistor Code		IXBF14N300
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		I4PAK
Collector Power Dissipation (Maximum)	Pc	120W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	28A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		50
Rise Time		380

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