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IXBF14N300 IGBT Transistor

The IXBF14N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBF14N300 transistor as follows.

Circuit diagram symbol of the IXBF14N300 transistor

IXBF14N300 Transistor Specification

Transistor Code IXBF14N300
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package I4PAK
Collector Power Dissipation (Maximum) Pc 120W
Collector-Emitter Voltage (Maximum) VCE 3000V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 28A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 50
Rise Time 380

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