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BRG20N120D IGBT Transistor

The BRG20N120D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BRG20N120D transistor as follows.

Circuit diagram symbol of the BRG20N120D transistor

BRG20N120D Transistor Specification

Transistor Code BRG20N120D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 240W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 76
Rise Time 38

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