IXST30N60B2D1 IGBT Transistor

The IXST30N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXST30N60B2D1 transistor as follows.

IXST30N60B2D1 Transistor Specification

Transistor Code		IXST30N60B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	48A
Rise Time		140

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