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IXGR72N60C3 IGBT Transistor

The IXGR72N60C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGR72N60C3 transistor as follows.

Circuit diagram symbol of the IXGR72N60C3 transistor

IXGR72N60C3 Transistor Specification

Transistor Code IXGR72N60C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS247
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 330
Rise Time 37

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