SKM200GB063D IGBT Transistor

The SKM200GB063D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM200GB063D transistor as follows.

SKM200GB063D Transistor Specification

Transistor Code		SKM200GB063D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	875W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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