FGA60N60UFD IGBT Transistor

The FGA60N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGA60N60UFD transistor as follows.

FGA60N60UFD Transistor Specification

Transistor Code		FGA60N60UFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	60.0A

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