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SMC7G50US60 IGBT Transistor

The SMC7G50US60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SMC7G50US60 transistor as follows.

Circuit diagram symbol of the SMC7G50US60 transistor

SMC7G50US60 Transistor Specification

Transistor Code SMC7G50US60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 21PM-BA
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 80

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