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SKW30N60 IGBT Transistor

The SKW30N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKW30N60 transistor as follows.

Circuit diagram symbol of the SKW30N60 transistor

SKW30N60 Transistor Specification

Transistor Code SKW30N60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 41A

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