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IXGT16N170AH1 IGBT Transistor

The IXGT16N170AH1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT16N170AH1 transistor as follows.

Circuit diagram symbol of the IXGT16N170AH1 transistor

IXGT16N170AH1 Transistor Specification

Transistor Code IXGT16N170AH1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 5V
Collector Current (Maximum) IC 16A
Rise Time 40

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