IRG4BC20FD-S IGBT Transistor

The IRG4BC20FD-S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC20FD-S transistor as follows.

IRG4BC20FD-S Transistor Specification

Transistor Code		IRG4BC20FD-S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.06V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		37
Rise Time		20

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