IXDP20N60BD1 IGBT Transistor

The IXDP20N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDP20N60BD1 transistor as follows.

IXDP20N60BD1 Transistor Specification

Transistor Code		IXDP20N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	32A
Rise Time		55

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