IRG4BC20FD IGBT Transistor

The IRG4BC20FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC20FD transistor as follows.

IRG4BC20FD Transistor Specification

Transistor Code		IRG4BC20FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	9A
Operating Junction Temperature (Maximum)		150 oC

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