MMG75HB120H6UN IGBT Transistor

The MMG75HB120H6UN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG75HB120H6UN transistor as follows.

MMG75HB120H6UN Transistor Specification

Transistor Code		MMG75HB120H6UN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		50

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