HGT1S10N120BNS IGBT Transistor

The HGT1S10N120BNS is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S10N120BNS transistor as follows.

HGT1S10N120BNS Transistor Specification

Transistor Code		HGT1S10N120BNS
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC

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