GT25H101 IGBT Transistor

The GT25H101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25H101 transistor as follows.

GT25H101 Transistor Specification

Transistor Code		GT25H101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	500V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		1000

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