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APT50GF60HR IGBT Transistor

The APT50GF60HR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF60HR transistor as follows.

Circuit diagram symbol of the APT50GF60HR transistor

APT50GF60HR Transistor Specification

Transistor Code APT50GF60HR
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO258
Collector Power Dissipation (Maximum) Pc 180W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 55A
Operating Junction Temperature (Maximum) 150 oC

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