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APT30GP60BDF1 IGBT Transistor

The APT30GP60BDF1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GP60BDF1 transistor as follows.

Circuit diagram symbol of the APT30GP60BDF1 transistor

APT30GP60BDF1 Transistor Specification

Transistor Code APT30GP60BDF1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 463W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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