IKD06N60-RF IGBT Transistor

The IKD06N60-RF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKD06N60-RF transistor as follows.

IKD06N60-RF Transistor Specification

Transistor Code		IKD06N60-RF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		24
Rise Time		8

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