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IXGH60N60 IGBT Transistor

The IXGH60N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH60N60 transistor as follows.

Circuit diagram symbol of the IXGH60N60 transistor

IXGH60N60 Transistor Specification

Transistor Code IXGH60N60
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 50

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