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IXGH40N120B2D1 IGBT Transistor

The IXGH40N120B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH40N120B2D1 transistor as follows.

Circuit diagram symbol of the IXGH40N120B2D1 transistor

IXGH40N120B2D1 Transistor Specification

Transistor Code IXGH40N120B2D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.5V
Collector Current (Maximum) IC 75A
Rise Time 140

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