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STGWT20H65FB IGBT Transistor

The STGWT20H65FB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT20H65FB transistor as follows.

Circuit diagram symbol of the STGWT20H65FB transistor

STGWT20H65FB Transistor Specification

Transistor Code STGWT20H65FB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 80
Rise Time 11

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