APT102GA60B2 IGBT Transistor

The APT102GA60B2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT102GA60B2 transistor as follows.

APT102GA60B2 Transistor Specification

Transistor Code		APT102GA60B2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	780W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	102A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		630
Rise Time		37

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