RJH60C9DPD IGBT Transistor

The RJH60C9DPD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60C9DPD transistor as follows.

RJH60C9DPD Transistor Specification

Transistor Code		RJH60C9DPD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MP3A
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	10A
Rise Time		100

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