IKW30N65EL5 IGBT Transistor

The IKW30N65EL5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW30N65EL5 transistor as follows.

IKW30N65EL5 Transistor Specification

Transistor Code		IKW30N65EL5
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	227W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.05V
Collector Current (Maximum)	IC	85A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		64
Rise Time		11

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