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SKM600GB126D IGBT Transistor

The SKM600GB126D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM600GB126D transistor as follows.

Circuit diagram symbol of the SKM600GB126D transistor

SKM600GB126D Transistor Specification

Transistor Code SKM600GB126D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 660A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 11000
Rise Time 60

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