SKM600GB126D IGBT Transistor

The SKM600GB126D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM600GB126D transistor as follows.

SKM600GB126D Transistor Specification

Transistor Code		SKM600GB126D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	660A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		11000
Rise Time		60

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