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IXA220I650NA IGBT Transistor

The IXA220I650NA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA220I650NA transistor as follows.

Circuit diagram symbol of the IXA220I650NA transistor

IXA220I650NA Transistor Specification

Transistor Code IXA220I650NA
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATIONS
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 255A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 50

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