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IRGSL4B60KD1 IGBT Transistor

The IRGSL4B60KD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGSL4B60KD1 transistor as follows.

Circuit diagram symbol of the IRGSL4B60KD1 transistor

IRGSL4B60KD1 Transistor Specification

Transistor Code IRGSL4B60KD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO262
Collector Power Dissipation (Maximum) Pc 63W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.50V
Collector Current (Maximum) IC 12A

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