CHT2312GP MOSFET Transistor

The CHT2312GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHT2312GP transistor as follows.

CHT2312GP Transistor Specification

Transistor Code		CHT2312GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10nC

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