CHM2362GP MOSFET Transistor

The CHM2362GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2362GP transistor as follows.

CHM2362GP Transistor Specification

Transistor Code		CHM2362GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.4nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		12.7nC

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