CHM2314GP MOSFET Transistor

The CHM2314GP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2314GP transistor as follows.

CHM2314GP Transistor Specification

Transistor Code		CHM2314GP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		182pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		5.3nC

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