CHM2321GP MOSFET Transistor

The CHM2321GP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2321GP transistor as follows.

CHM2321GP Transistor Specification

Transistor Code		CHM2321GP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	1.25W
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		14.8nC

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